SEA Company offers summer discounts for the stock position: N-channel power MOSFET with integrated fast diodes (HiPerFET) in SOT-227B package. Electronic components IXFN 180N20 are manufactured by IXYS Semiconductor GmbH. A discount for this position is 20%.
Attention! The number of promotional products is limited.
Specifications of IXFN 180N20:
FET Type: MOSFET N-Channel, Metal Oxide
Ultimate constant dissipation power of MOSFET's drain: 700 W
Drain to Source Voltage (Vdss): 200V
Ultimate gate-source voltage (Vgs): 20 V
Current - Continuous Drain (Id): 180A
Ultimate temperature (Tj): 150 C
Drain-source capacitance (Cd): 22000 pF
Drain-source resistance in the ON state (Rds):0.01 Ohms
Package: SOT227B
Considering purchase MOSFET’s for special price, please, contact SEA Company: (044) 291-00-41, e-mail: info@sea.com.ua
